|
Online edition of India's National Newspaper Thursday, October 05, 2000 |
|
Front Page |
National |
Southern States |
Other States |
International |
Opinion |
Business |
Sport |
Science & Tech |
Miscellaneous |
Classifieds |
Employment |
Index |
Home |
|
Science & Tech
| Previous
| Next
Corrosion experiments on silicon wafers
IN A new approach to studying atmospheric corrosion on copper,
researchers at the Department of Energy's Sandia National
Laboratories are putting multiple corrosion experiments on a
single silicon wafer in a type of micro-laboratory.
The combinatorial experimental method promises to shed light on
how and why copper corrodes. Conductive copper is essential to
most electronic devices. Its corrosion can cause failure.
Considerable interest exists both inside and outside Sandia to
figure out ways to reduce copper corrosion and to predict the
life of electronic components when it does.
The concept of combinatorial experimentation, where multiple
experiments occur simultaneously and under the same conditions,
has routinely been used in biomedical research, but not applied
to characterize corrosion.
"In the past, whenever we did copper corrosion tests, we would
put a piece of the copper into an atmospheric chamber, add
contaminants at very low levels ppm and less0, and run the
experiment," says Charles Barbour, project principal
investigator. "But this serial approach is very time intensive
and we were unsure that the environment was the same experiment
to experiment. It was difficult to compare results."A range of
combinatorial experiments have been completed in various
environments containing sulfide species and humidity. The results
for one type of experiment that used microlab electrical-test
structures are particularly noteworthy, Barbour says.
Researchers evaporated a thin copper film onto silicon wafers
using an electron beam. They then etched away portions of the
copper film using a photolithographic process that left thin
"meander lines" of copper. The 16 lines formed "electrical
resistors" used to monitor the extent of corrosion as a function
of time. The resistive elements were ion-implanted with various
impurities such as indium, oxygen, deuterium, and aluminum.
During exposure to the environment containing less than a part
per million of hydrogen sulfide, researchers calculated the
thickness of the copper- sulfide corrosion product layer grown on
the meander lines from the change in resistance.
The researchers discovered that indium slows corrosion whereas
deuterium speeds it up. "These experiments show it is possible to
use micro-combinatorial techniques to efficiently characterize
copper corrosion," says Jeff Braithwaite, an expert in corrosion
science. "Use of the small samples proved beneficial because the
extent of corrosion could be easily monitored as a function of
time and because all of the experiments could be simultaneously
performed."
Barbour says another important outcome of the parallel approach
is that all 16 tests occurred simultaneously in the same
environment. This condition eliminates issues concerning
reproducibility of the corrosion environment.
Send this article to Friends by E-Mail
|
|
Section : Science & Tech Previous : Potential of nanojets Next : All-plastic microprocessors | |
|
Front Page |
National |
Southern States |
Other States |
International |
Opinion |
Business |
Sport |
Science & Tech |
Miscellaneous |
Classifieds |
Employment |
Index |
Home | |
|
Copyrights © 2000 The Hindu Republication or redissemination of the contents of this screen are expressly prohibited without the written consent of The Hindu |
|